Table T2. ICP-AES run parameters.
 
Standard
Wavelength
(nm)
Slit
width
(nm)*
Integration
time per
calculation
point
(s)
Voltage
(V)
Mode
Increment
between
points
(nm)
Number of
calculation
points
Al 396.150 20/16 0.5 731 2 0.0270 5
Ca 393.370 20/16 0.5 351 2 0.0180 5
Fe 259.940 20/16 4.0 732 5 0.0020 1
K 766.490 20/16 Alk 0.5 993 2 0.0022 5
Mg 285.213 20/16 4.0 553 5 0.0022 1
Mn 257.610 20/16 4.0 643 5 0.0020 1
Na 589.592 20/16 Alk 0.5 632 2 0.0021 5
P 178.229 20/16 0.5 933 2 0.0018 5
Si 251.611 20/51 0.5 612 2 0.0028 5
Si 212.412 20/51 0.5 652 2 0.0030 5
Si 288.158 20/51 0.5 623 2 0.0029 5
Ti 334.941 20/16 0.5 651 2 0.0018 5
Ba 455.400 20/16 4.0 622 5 0.0250 1
Cr 267.716 20/16 4.0 993 5 0.0190 1
Ni 231.604 20/16 0.5 990 2 0.0021 1
Sc 361.384 20/16 4.0 753 5 0.0018 1
Sr 407.771 20/16 0.5 572 2 0.0026 5
V 292.402 20/16 4.0 993 5 0.0021 1
Y 371.030 20/16 4.0 693 5 0.0027 1
Zr 343.823 20/16 0.5 673 2 0.0018 5

Notes: The above settings are stored in the software as "BAS192 Method Acquisition Parameter." * = widths of the entrance and exit slits. Alk = an increase in sheath gas flow from 0.15-0.2 L/min to 0.8 L/min for analysis of these elements. = the interval between each of the calculation points in Mode 2 or the calculation window (in nanometers) that constitutes the single point in Mode 5.